Tl3VS4 — Properties & Data | MatWorld

Tl3VS4

Name: Tl3VS4
Brand: MatWorld

semiconductor

· Tl3VS4

Tl3VS4 is a ternary semiconductor compound composed of thallium, vanadium, and sulfur, belonging to the family of metal chalcogenides. This material is primarily of research interest rather than established in widespread industrial production, with potential applications in solid-state electronics and optoelectronics where its semiconductor properties could enable novel device designs. The compound's notable characteristics within the chalcogenide family—including its layered crystal structure and tunable electronic properties—make it a candidate for exploring advanced semiconducting materials, particularly for applications requiring materials with distinct electronic behavior compared to conventional group IV or III-V semiconductors.

experimental semiconductor researchthin-film electronicssolid-state device developmentchalcogenide photonicsmaterials discovery for next-generation electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	27.57	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3900	-	DFT · OptB88vdW
Shear Modulus(G)	9.760	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.043	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.970	eV	Measured
↳	1.892	eV	DFT · OptB88vdW
↳	1.809	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	19.50	-	DFT · OptB88vdW
↳	23.39	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.204	-	DFT · OptB88vdW
↳	8.465	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	1.920	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.710	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.1681	C/m²	DFT · OptB88vdW
↳	0.2388	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.00158	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00221	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-387.5	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	411.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	27.20	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6954	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl3VS4

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