Tl₃AsSe₃ is a ternary chalcogenide semiconductor compound combining thallium, arsenic, and selenium in a layered crystal structure. This material belongs to the family of narrow-bandgap semiconductors and is primarily investigated in research contexts for its potential in infrared optoelectronics and thermoelectric applications, where its composition offers tunable electronic and thermal properties distinct from binary semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.31 | GPa | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 6.790 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.367 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.300 | eV | — | ||
| ↳ | 0.6960 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 26.51 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.3460 | C/m² | — | ||
Seebeck Coefficient(S) | -138.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3238 | eV/atom | — |