Tl₃N₃O₆ is an experimental semiconductor compound combining thallium, nitrogen, and oxygen elements, likely synthesized for research into novel functional materials rather than established industrial production. This material belongs to the broader family of mixed-metal oxynitride semiconductors, which are being investigated for potential applications in optoelectronics, photocatalysis, and energy conversion due to their tunable bandgaps and unique electronic structures. Research compounds of this type are notable for their potential to address limitations of conventional semiconductors in specific niche applications, though their practical deployment remains limited by synthesis scalability, stability concerns, and cost considerations compared to mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,906.3 | ksi | — | ||
Shear Modulus(G) | 1,525.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4690 | eV/atom | — |