Tl₃Ga₉S₁₃O₂ is a mixed-valence thallium gallium sulfide-oxide semiconductor compound belonging to the ternary chalcogenide family. This is an experimental/research material studied for its potential in photonic and optoelectronic applications, where the combination of thallium, gallium, and chalcogenide chemistry offers tunable band structure and nonlinear optical properties. Engineers and materials researchers investigate compounds in this family for applications requiring mid-infrared transparency, frequency conversion, or photon detection where conventional semiconductors fall short.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,604.8 | ksi | — | ||
Shear Modulus(G) | 2,736.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.253 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8840 | eV/atom | — |