Tl₂TeS₃ is a ternary chalcogenide semiconductor compound composed of thallium, tellurium, and sulfur. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its band gap and optical absorption properties offer potential advantages in infrared detection and energy conversion devices. While not yet widely commercialized, thallium chalcogenides belong to a family of materials explored as alternatives to conventional semiconductors in niche applications requiring specific band gap engineering or radiation-hardness characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.229 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.600 | eV | — | ||
| ↳ | 1.220 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2751 | eV/atom | — |