Tl₂SeAs₂Te₃ is a mixed-halide telluride semiconductor compound combining thallium, selenium, arsenic, and tellurium elements. This is a research-phase material primarily studied for potential optoelectronic and infrared applications, belonging to the broader family of heavy-element chalcogenide semiconductors that exhibit strong light absorption and interesting band-gap characteristics in the infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6700 | eV | — |