Thallium sulfide (Tl₂S) is a binary semiconductor compound belonging to the chalcogenide material family, characterized by ionic bonding between thallium and sulfur. While primarily a research material rather than a mainstream industrial semiconductor, Tl₂S has been investigated for infrared detection and photosensitive applications due to its narrow bandgap and strong light absorption in the infrared region. Engineers consider Tl₂S and related thallium compounds where conventional semiconductors (Si, GaAs) are insufficient for long-wavelength infrared sensing, though toxicity concerns and limited commercial maturity restrict adoption compared to alternatives like HgCdTe or lead chalcogenides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2889 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9840 | eV | DFT · OptB88vdW | ||
| ↳ | 1.000 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 12.95 | - | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.4033 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.870 | me | DFT · OptB88vdW · 27°C | ||
Thermoelectric Power Factor(PF)2 entries | 0.00248 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00132 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -219.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 284.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.3935 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.3282 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data