Tl₂Sn₄Br₁₀ is a mixed-halide perovskite-related semiconductor compound combining thallium, tin, and bromine in a layered structure. This material is primarily of research and development interest rather than established in production, studied for its potential in optoelectronic and photovoltaic applications due to the electronic properties arising from its heavy-metal halide framework. Engineers evaluating this compound should note it belongs to the broader family of halide perovskites and perovskite variants, where composition engineering at the atomic level drives performance tuning for light absorption and charge transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.389 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8650 | eV/atom | — |