Tl2 Sn1 As2 S6
semiconductorTl₂Sn₁As₂S₆ is a quaternary chalcogenide semiconductor compound combining thallium, tin, arsenic, and sulfur. This material belongs to the family of complex sulfide semiconductors, which are primarily investigated for infrared optics, nonlinear optical applications, and potential photovoltaic devices due to their extended bandgap tunability and strong light-matter interactions in the infrared region. As a research-stage compound rather than a commercial product, it represents an exploratory alternative to traditional infrared materials like germanium or zinc selenide, offering potential advantages in cost-effective IR window design and specialty optoelectronic applications where the specific combination of constituent elements provides favorable electronic and optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |