Tl₂Ni₃S₂ is a ternary chalcogenide semiconductor compound combining thallium, nickel, and sulfur into a layered crystal structure. This is primarily a research material studied for its electronic and thermal transport properties, rather than an established commercial material; it belongs to the family of transition-metal chalcogenides being investigated for thermoelectric and optoelectronic device applications where the interplay of multiple elements can yield tunable band gaps and carrier mobility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02070 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3190 | eV/atom | — |