Tl2 In1 Ga1 F6

semiconductor
· Tl2 In1 Ga1 F6

Tl₂InGaF₆ is a mixed-halide perovskite semiconductor compound combining thallium, indium, and gallium fluorides, representing an emerging class of materials in solid-state physics research. This compound is primarily of academic and experimental interest for optoelectronic applications such as scintillators, radiation detectors, and photonic devices where its fluoride-based composition offers potential advantages in optical transparency and radiation hardness compared to oxide-based alternatives. The mixed-cation approach allows tuning of electronic bandgaps and crystal properties for next-generation semiconductor devices, though industrial deployment remains limited and the material continues to be characterized at the research level.

radiation detectionscintillator materialsoptoelectronic researchphotonic devicessolid-state physics researchoptical transparency applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
6,454.2
ksi—
Shear Modulus(G)
1,200.9
ksi—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
2.492
eV—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
-2.237
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.