Tl2 I6 O18

semiconductor

· Tl2 I6 O18

Tl₂I₆O₁₈ is a mixed-valence thallium iodide oxide compound belonging to the family of layered semiconductor materials. This is a research-phase material rather than an established commercial compound, studied primarily for its potential in optoelectronic and radiation detection applications due to its complex crystal structure and semiconductor behavior. The material's layered structure and heavy-element composition make it of interest in the solid-state physics community, though industrial deployment remains limited and the compound is not widely used in mainstream engineering applications.

radiation detection (research)optoelectronic devices (experimental)solid-state physics researchhigh-Z semiconductor materialsphoton detection systems (exploratory)materials science characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.151	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4310	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl2 I6 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control