Tl2 Ge2 F6

semiconductor

· Tl2 Ge2 F6

Tl₂Ge₂F₆ is an inorganic fluoride semiconductor compound belonging to the thallium-germanium-fluoride family. This is primarily a research-phase material studied for its potential in optoelectronic and photonic applications, leveraging the bandgap properties that arise from its mixed-cation fluoride structure. While not yet established in high-volume industrial production, compounds in this material class are investigated for scintillators, radiation detectors, and solid-state optical devices where halide semiconductors offer advantages in tunable electronic properties and chemical stability.

radiation detectionscintillator researchoptoelectronic devicesphotonic materialssolid-state optical sensorsadvanced research applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	2,910.5	ksi	—
Shear Modulus(G)	1,267.6	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.436	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.134	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl2 Ge2 F6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control