Tl₂Ag₂O₄ is a mixed-metal oxide semiconductor compound containing thallium and silver. This material is primarily of research interest rather than established in high-volume industrial production, with potential applications in optoelectronic devices, photocatalysis, and solid-state ion conductors where the combination of heavy metal (Tl) and noble metal (Ag) oxides may offer unique electronic or ionic transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,442.6 | ksi | — | ||
Shear Modulus(G) | 3,612.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08290 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5590 | eV/atom | — |