Tl₂Ag₂I₄ is a mixed-halide semiconductor compound combining thallium, silver, and iodine in a layered crystal structure. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its tunable bandgap and ionic conductivity make it a candidate for next-generation light-emitting devices, photodetectors, and solid-state ionics. While not yet widely commercialized, materials in this thallium-silver-halide family are investigated as alternatives to more conventional semiconductors due to their potential for enhanced light absorption and room-temperature ionic transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.39 | GPa | — | ||
Shear Modulus(G) | 8.893 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.833 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4550 | eV/atom | — |