Tl₁₂S₂Br₈ is a mixed-halide thallium chalcogenide compound, representing an emerging class of layered semiconductor materials combining thallium, sulfur, and bromine. This is primarily a research-stage material studied for potential optoelectronic and photovoltaic applications, where the tunable band gap from halide mixing offers advantages over single-halide alternatives in controlling light absorption and charge carrier dynamics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.722 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7740 | eV/atom | — |