Tl1 N1

semiconductor

· Tl1 N1

Thallium nitride (TlN) is an inorganic semiconductor compound that belongs to the III-V nitride family, potentially exhibiting wide bandgap or narrow bandgap characteristics depending on its crystalline phase and defect structure. While less common than established III-V semiconductors like GaN or InN, TlN represents an experimental research material being investigated for niche optoelectronic and electronic applications where thallium's unique electronic properties might offer advantages in specific narrow-spectrum wavelengths or high-field transport regimes.

experimental optoelectronicswide-bandgap semiconductor researchinfrared photodetectorshigh-field electronics researchthin-film deposition studiesmaterials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	93.00	GPa	—
Shear Modulus(G)	38.10	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05270	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.059	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control