Tl1 N1 O2

semiconductor

· Tl1 N1 O2

Thallium nitrate oxide (Tl₁N₁O₂) is an inorganic semiconductor compound combining thallium, nitrogen, and oxygen elements. This is a specialized research material with limited commercial production, studied primarily for its electronic and optoelectronic properties within the broader family of metal nitride-oxide semiconductors. While not widely deployed in mainstream applications, compounds in this family are investigated for potential use in wide-bandgap semiconductor devices, photocatalysis, and specialized sensing applications where thallium's unique electronic structure offers advantages over conventional semiconductors.

research semiconductorsphotocatalytic materialswide-bandgap electronicsexperimental optoelectronicsspecialized sensorsmaterials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	25.86	GPa	—
Shear Modulus(G)	9.933	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.079	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 N1 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control