Tl1 Hg1 N3 O6

semiconductor

· Tl1 Hg1 N3 O6

Tl₁Hg₁N₃O₆ is an experimental mixed-metal nitrate oxide compound containing thallium and mercury, classified as a semiconductor. This material belongs to an understudied class of heavy-metal coordination compounds that are primarily of research interest rather than established industrial use. The compound's potential relevance lies in fundamental materials science investigations of electronic properties in complex metal-organic frameworks, though practical applications remain largely undeveloped due to toxicity concerns with both thallium and mercury constituents and limited understanding of its synthesis, stability, and performance characteristics.

experimental semiconductor researchheavy-metal coordination chemistryelectronic materials developmentlaboratory investigation onlynot recommended for production use

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5210	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 Hg1 N3 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control