Tl1 Ge1 Br3

semiconductor

· Tl1 Ge1 Br3

Thallium germanium tribromide (TlGeBr₃) is a halide perovskite semiconductor compound combining group 13 (Tl), group 14 (Ge), and halide (Br) elements. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its halide perovskite structure offers potential for tunable bandgap, strong light absorption, and solution processability; however, thallium toxicity and stability challenges have limited its commercial adoption compared to lead-based perovskite alternatives.

experimental perovskite solar cellshalide semiconductor researchoptoelectronic device developmentX-ray detection (emerging)photovoltaic material screeninglaboratory and thin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.012	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 Ge1 Br3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control