CdTe (cadmium telluride) is a II-VI compound semiconductor with a direct bandgap, commonly encountered in the form of polycrystalline thin films. It is primarily used in photovoltaic devices and radiation detection applications, where its high photon absorption coefficient and reasonable charge carrier mobility make it an attractive alternative to silicon for space and terrestrial solar panels, as well as X-ray and gamma-ray detectors. The material offers particular advantages in high-temperature and high-radiation environments, though cadmium toxicity and manufacturing complexity require careful handling and environmental controls compared to more conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2280 | eV/atom | — |