Tl₁Bi₂ is a bismuth-thallium intermetallic compound belonging to the class of narrow-bandgap semiconductors. This material is primarily investigated in research contexts for thermoelectric and quantum electronic applications, where the combination of thallium and bismuth creates favorable electronic properties for energy conversion or specialized sensing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.02000 | eV/atom | — |