Tl₁B₁Te₂ is a ternary semiconductor compound combining thallium, boron, and tellurium in a 1:1:2 stoichiometry. This is a research-phase material within the broader family of III-V and mixed-valence semiconductors, explored for its potential narrow bandgap and optoelectronic properties. While not yet established in mainstream commercial production, compounds in this family are investigated for infrared detection, photovoltaic conversion, and specialized electronic devices where unconventional bandgap engineering is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.049 | eV/atom | — |