Tl0.001Te1Pb0.999

semiconductor
· Tl0.001Te1Pb0.999

Tl₀.₀₀₁Te₁Pb₀.₉₉₉ is a heavily lead-doped tellurium semiconductor with trace thallium, representing a narrow-bandgap material in the PbTe family. This composition falls within thermoelectric and infrared detector research, where PbTe-based systems are extensively studied for their narrow direct bandgap and strong response in the mid-to-far infrared spectrum. The thallium doping at sub-percent levels is primarily an experimental modification to tune electronic properties such as carrier concentration or band structure; materials of this type are not yet established in mainstream industrial production but are actively investigated in research settings for potential infrared sensing and thermoelectric energy conversion applications.

infrared detectors (research)thermoelectric coolersnarrow-bandgap semiconductorsthermal imaging sensors (exploratory)optoelectronic device developmentbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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