TiTe2 is a layered transition metal dichalcogenide semiconductor composed of titanium and tellurium. This material belongs to an emerging class of two-dimensional semiconductors being investigated for next-generation electronics and optoelectronics, where its layered structure enables mechanical exfoliation into ultrathin sheets with potentially enhanced electronic properties compared to bulk forms. While primarily a research material rather than an established commercial compound, TiTe2 is of interest to engineers exploring alternatives to conventional semiconductors for applications requiring tunable bandgap, high carrier mobility, or integration into flexible and van der Waals heterostructure devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 17.64 | GPa | — | ||
| ↳ | 34.34 | GPa | — | ||
Exfoliation Energy(Eexf) | 109.8 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G)2 entries | 12.45 | GPa | — | ||
| ↳ | 21.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.121 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 100.7 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -7.843 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00900 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7194 | eV/atom | — |