TiSi2 is a titanium silicide intermetallic compound that combines titanium and silicon in a hard, ceramic-like phase with metallic character. It is primarily used in semiconductor device fabrication as a contact material and diffusion barrier in integrated circuits, where it provides low electrical resistivity and excellent thermal stability at the silicon-metal interface. TiSi2 is valued in microelectronics for its ability to maintain structural integrity during high-temperature processing steps and its compatibility with standard silicon manufacturing, making it a preferred choice over alternatives like TaSi2 or WSi2 in many legacy and current semiconductor nodes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 142.5 | GPa | — | ||
| ↳ | 142.5 | GPa | — | ||
| ↳ | 135.1 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.4020 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.1907 | - | — | ||
| ↳ | 0.1800 | - | — | ||
Shear Modulus(G)3 entries | 111.1 | GPa | — | ||
| ↳ | 111.1 | GPa | — | ||
| ↳ | 109.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.980 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 12.78 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02690 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5908 | eV/atom | — | ||
| ↳ | -0.4388 | eV/atom | — |