TiSe₂ is a layered transition metal dichalcogenide semiconductor composed of titanium and selenium atoms arranged in a two-dimensional crystal structure. This material is primarily investigated in research and emerging technology contexts rather than high-volume industrial production, with potential applications in optoelectronics, energy storage, and thermoelectric devices that exploit its layered geometry and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 2,338.7 | ksi | — | ||
| ↳ | 6,004.6 | ksi | — | ||
Exfoliation Energy(Eexf) | 94.48 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G)2 entries | 1,717.4 | ksi | — | ||
| ↳ | 3,997.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1866 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.550 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 414.9 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | 0.5500 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01220 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.163 | eV/atom | — |