TiMgO2S is an experimental ternary oxide-sulfide semiconductor compound combining titanium, magnesium, oxygen, and sulfur in a mixed-anion structure. This material belongs to an emerging class of layered semiconductors being investigated for photocatalytic and optoelectronic applications, where the combination of anion chemistry offers tunable band structure and enhanced light absorption compared to conventional binary oxides. Research interest centers on photocatalytic water splitting, environmental remediation, and thin-film electronics, though industrial deployment remains limited and the material is primarily found in academic studies exploring next-generation semiconductors with improved efficiency.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | -1.012 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.100 | eV/atom | — |