TiGaN3
metalTiGaN3 is a titanium-based metal nitride compound combining titanium and gallium with nitrogen, representing an experimental material in the ternary metal nitride family. This class of materials is being investigated in research settings for potential applications in high-temperature structural components, wear-resistant coatings, and semiconductor device platforms, where the combination of metallic and ceramic properties could offer advantages over conventional single-element nitrides or binary compounds. The material remains largely in the development phase, with specific industrial adoption limited, but belongs to a family of ternary nitrides showing promise for extreme environment applications where thermal stability and hardness are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.374 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.440 | eV/atom | — |