Ti6Ga2 is a titanium-based semiconductor compound containing gallium, belonging to the III-V semiconductor family. This material is primarily investigated in research contexts for optoelectronic and high-frequency electronic applications, where the titanium-gallium composition offers potential advantages in bandgap engineering and thermal stability compared to conventional GaAs or InGaAs devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 120.6 | GPa | — | ||
Shear Modulus(G) | 50.84 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3130 | eV/atom | — |