Ti4 Zn4 O8
semiconductorTi4Zn4O8 is an experimental titanium-zinc oxide compound belonging to the mixed-metal oxide semiconductor family, synthesized primarily for research applications rather than established industrial production. This material is investigated for potential optoelectronic and photocatalytic applications due to the combined electronic properties of titanium and zinc oxides, offering researchers a platform to explore tunable bandgap characteristics and catalytic activity in controlled material compositions. While not yet a mainstream engineering material, compounds in this family are of interest for next-generation photocatalysts, gas sensors, and semiconductor devices where the synergy between two active metal oxides could provide performance advantages over single-phase alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |