Ti4 Zn2 S8
semiconductorTi₄Zn₂S₈ is a ternary semiconductor compound combining titanium, zinc, and sulfur elements, representing an emerging material in the layered chalcogenide family. This material is primarily of research interest for optoelectronic and photovoltaic applications, where mixed-metal sulfides are being investigated as alternatives to conventional semiconductors for light absorption, charge transport, and quantum confinement effects. Its notable characteristics stem from the potential for tunable bandgap and layer-dependent properties typical of this material class, making it relevant for next-generation solar cells, photodetectors, and thin-film electronic devices where conventional silicon or III-V semiconductors may be cost-prohibitive or functionally limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |