Ti4 Zn2 O10
semiconductorTi4Zn2O10 is a mixed-valence titanium-zinc oxide ceramic compound belonging to the family of complex metal oxides, synthesized primarily for research and advanced materials applications rather than high-volume industrial production. This material has attracted attention in semiconductor and photocatalytic research contexts, where its layered oxide structure and electronic properties offer potential for environmental remediation and energy conversion applications. Its combination of titanium and zinc oxides suggests relevance to photocatalysis, gas sensing, or emerging optoelectronic devices, though practical engineering deployment remains limited compared to more established titanium dioxide or zinc oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |