Ti4Ga2N2 is an experimental nitride semiconductor compound combining titanium, gallium, and nitrogen in a ternary phase. This material belongs to the class of III-V and transition-metal nitride semiconductors, representing research into wide-bandgap electronic and optoelectronic materials. While not yet commercially established, compounds in this family are of interest for high-temperature electronics, power devices, and potentially UV or visible optoelectronics where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00310 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.285 | eV/atom | — |