Ti3 In1 N1

semiconductor

· Ti3 In1 N1

Ti₃In₁N₁ is an intermetallic nitride compound combining titanium and indium in a ceramic semiconductor phase. This material belongs to the family of transition metal nitrides and represents research-stage development rather than a widely commercialized product; such compounds are investigated for their potential in hard coatings, electronic devices, and thermal management applications where the combined properties of titanium's strength and indium's electronic characteristics may offer advantages over conventional alternatives.

hard protective coatingssemiconductor researchrefractory applicationsthermal management materialselectronic device substratesexperimental thin films

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	22,355.1	ksi	—
Shear Modulus(G)	4,345.3	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02530	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9240	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti3 In1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control