Ti2Zn4Ir2O12 is a mixed-metal oxide semiconductor containing titanium, zinc, and iridium in a complex crystalline structure. This is a research-phase compound rather than a commercial material, studied primarily for its electronic and catalytic properties within the broader family of multi-component oxide semiconductors. The combination of transition metals (Ti, Ir) with zinc suggests potential applications in catalysis, photoelectrochemistry, or advanced electronic devices, though practical industrial deployment remains limited pending optimization of synthesis routes and property characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8971 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.768 | eV/atom | — |