Ti2 Zn2 Bi4 O12

semiconductor

· Ti2 Zn2 Bi4 O12

Ti2Zn2Bi4O12 is a quaternary oxide semiconductor compound combining titanium, zinc, and bismuth elements in a mixed-valence crystal structure. This is a research-phase material primarily investigated for photocatalytic and optoelectronic applications, where the layered bismuth oxide component and zinc–titanium oxide framework offer potential advantages in visible-light absorption and charge carrier management compared to conventional single-oxide semiconductors.

photocatalytic water treatmentvisible-light photocatalysisoptoelectronic devicesresearch semiconductorsbismuth-based oxidesenvironmental remediation (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.726	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.955	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti2 Zn2 Bi4 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control