Ti₂Sn₂O₆ is a mixed-metal oxide semiconductor compound combining titanium and tin in a defined stoichiometric ratio. This material belongs to the family of complex oxide semiconductors and is primarily of research and developmental interest rather than a mature commercial material. The compound shows potential in optoelectronic and sensing applications due to its semiconductor properties, though practical engineering use remains limited; it may serve as a precursor or active phase in advanced ceramic devices, gas sensors, or photocatalytic systems where the combined electronic properties of titanium and tin oxides offer advantages over single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,254.2 | ksi | — | ||
Shear Modulus(G) | 5,074.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.274 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.523 | eV/atom | — |