Ti₂Se₂ is a layered transition metal dichalcogenide semiconductor composed of titanium and selenium, belonging to the family of 2D materials that have attracted significant research interest in recent years. This compound is primarily investigated in academic and laboratory settings for next-generation electronics, optoelectronics, and energy storage applications, where its semiconducting properties and layered crystal structure offer potential advantages over conventional silicon-based devices in niche applications requiring ultrathin active layers or novel quantum effects.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,543.3 | ksi | — | ||
Shear Modulus(G) | 8,362.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9080 | eV/atom | — |