Ti2 Ga4 Er1

semiconductor

· Ti2 Ga4 Er1

Ti₂Ga₄Er₁ is an intermetallic compound combining titanium, gallium, and erbium elements, belonging to the ternary intermetallic semiconductor family. This is a research-phase material investigated for its potential electronic and thermal properties in advanced semiconductor and optoelectronic applications, with erbium addition explored for rare-earth doping effects in wide-bandgap device engineering.

experimental semiconductorsrare-earth doped electronicswide-bandgap devicesmaterials research and developmentternary intermetallic compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5170	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti2 Ga4 Er1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control