Ti2 Bi4 O10

semiconductor

· Ti2 Bi4 O10

Ti₂Bi₄O₁₀ is a bismuth-titanium mixed-metal oxide semiconductor compound belonging to the layered perovskite family of materials. This is primarily a research-phase material investigated for photocatalytic and optoelectronic applications due to its tunable band gap and layered crystal structure that facilitates charge carrier transport. The material shows promise in environmental remediation and energy conversion contexts, though industrial deployment remains limited; it competes with more established titanium dioxide variants and bismuth-based semiconductors in niche applications where its specific electronic properties offer advantages over conventional alternatives.

photocatalytic water treatmentvisible-light photocatalysissemiconductor researchoptoelectronic devicesenvironmental remediationadvanced ceramics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.606	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.987	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti2 Bi4 O10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control