Ti1 Zn2 W1 O6

semiconductor

· Ti1 Zn2 W1 O6

Ti₁Zn₂W₁O₆ is a mixed-metal oxide semiconductor compound combining titanium, zinc, and tungsten in a ternary oxide system. This is a research-stage material being explored for photocatalytic and electronic applications, where the combination of metal cations aims to engineer band structure and defect chemistry for improved performance compared to single-component oxides like TiO₂ or ZnO.

photocatalytic water treatmentenvironmental remediationsemiconductor researchthin-film electronicsvisible-light photocatalysisemerging functional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00430	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.131	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 Zn2 W1 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control