Ti1 Zn1 O3

semiconductor

· Ti1 Zn1 O3

Ti1Zn1O3 is an experimental ternary oxide semiconductor compound combining titanium, zinc, and oxygen in a 1:1:3 stoichiometric ratio. This material belongs to the family of mixed-metal oxides and represents an emerging composition in semiconductor research, potentially combining properties of titanium dioxide (widely used in photocatalysis) and zinc oxide (a transparent conducting oxide). The material's specific phase structure and electronic properties are still under investigation, making it of primary interest to materials researchers exploring novel oxide semiconductors for next-generation devices rather than mature industrial applications.

Photocatalytic applications (research)Transparent electronics (experimental)Optoelectronic devices (development)Gas sensing (potential)Solar energy conversion (exploratory)Thin-film semiconductors (early stage)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.08420	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.062	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 Zn1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control