Ti1Zn1Bi2O6 is an experimental ternary oxide semiconductor composed of titanium, zinc, and bismuth oxides, synthesized primarily in research settings to explore novel electronic and photocatalytic properties. This material represents an emerging class of multi-metal oxides being investigated for applications requiring tunable bandgaps and enhanced charge carrier dynamics compared to binary oxide semiconductors like TiO2 or ZnO. The material's potential lies in photocatalysis, optoelectronics, and environmental remediation, though it remains largely in the laboratory phase without established large-scale industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 94.93 | GPa | — | ||
Shear Modulus(G) | 45.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8961 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.936 | eV/atom | — |