Ti₁V₂Te₄ is a ternary transition metal telluride semiconductor combining titanium, vanadium, and tellurium. This is a research-phase compound rather than an established commercial material; it belongs to the family of mixed-metal chalcogenides being investigated for thermoelectric, photovoltaic, and topological electronic applications. The material's stiffness characteristics and semiconductor band structure make it a candidate for studies in energy conversion and quantum materials, though industrial adoption remains limited and primarily confined to academic and early-stage materials research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.71 | GPa | — | ||
Shear Modulus(G) | 31.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4350 | eV/atom | — |