Ti1 V1 O4
semiconductorTi₁V₁O₄ is a mixed-valence titanium-vanadium oxide semiconductor, a quaternary compound belonging to the family of transition metal oxides with potential electrochemical and photocatalytic properties. This material is primarily of research interest rather than established in high-volume production, with investigations focusing on energy storage, photocatalysis, and electronic device applications where the tunable band structure from combined Ti and V oxidation states offers advantages over single-metal oxides. Engineers considering this material should evaluate it as an emerging candidate for niche applications requiring the synergistic properties of both titanium and vanadium oxides rather than as a mature, commodity choice.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |