Ti₁Sn₁O₄ is a mixed-metal oxide semiconductor compound combining titanium and tin oxides in a 1:1 ratio. This material belongs to the family of binary and ternary oxide semiconductors and is primarily investigated in research settings for optoelectronic and photocatalytic applications. The titanium-tin oxide system is of interest for gas sensing, photocatalysis under UV/visible light, and potential thin-film transistor applications due to the complementary properties of its constituent oxides—titanium oxide's photocatalytic activity and tin oxide's electrical conductivity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 173.5 | GPa | — | ||
Shear Modulus(G) | 49.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.269 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.431 | eV/atom | — |