Ti1 O6 Zn1 Bi2

semiconductor

· Ti1 O6 Zn1 Bi2

Ti₁O₆Zn₁Bi₂ is an oxide semiconductor compound combining titanium, zinc, and bismuth oxides in a mixed-metal oxide structure. This is a research-phase material within the family of complex metal oxides and perovskite-related compounds, which are being explored for optoelectronic and photocatalytic applications where conventional semiconductors face cost or performance limitations. The bismuth-containing composition suggests potential for visible-light activity and low-toxicity alternatives to lead-based semiconductors, though industrial adoption remains limited pending property validation and scalability demonstration.

photocatalysisvisible-light semiconductorsexperimental optoelectronicsenvironmental remediationsolar energy conversionalternative to lead-based oxides

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.689	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.947	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 O6 Zn1 Bi2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control