Ti1 Mo2 S4
semiconductorTi₁Mo₂S₄ is a ternary transition metal sulfide semiconductor combining titanium and molybdenum with sulfur, representing an emerging class of layered chalcogenide materials. This compound is primarily explored in research contexts for next-generation electronic and photonic devices, where its semiconductor properties could enable applications in field-effect transistors, photodetectors, and energy storage systems—offering potential advantages over traditional binary sulfides like MoS₂ through enhanced tunability via multi-metal composition. The material remains largely in the experimental phase, with its development motivated by the broader potential of transition metal dichalcogenides and polychalcogenides for flexible electronics, catalysis, and light-matter interactions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |