Ti₁Ga₁Pd₂ is an intermetallic semiconductor compound combining titanium, gallium, and palladium in a defined stoichiometric ratio. This material belongs to the family of ternary intermetallics and is primarily of research interest rather than established in high-volume industrial production. The compound's semiconducting behavior and composition suggest potential applications in thermoelectric devices, electronic materials research, or specialized thin-film applications, though it remains largely in the experimental/development phase within materials science exploration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,109.3 | ksi | — | ||
Shear Modulus(G) | 4,258.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00990 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6290 | eV/atom | — |